MSC

In order to stay highly competitive globally as well as domestically, we have been focusing on developing our products through our own researches and technologies. Our lines include additives, corrosion inhibitors, cleaners, activators and a catalyst as well as eco-friendly products related to electronic components, such as semi-conductor, PCB, and cellular phones. Also focus on wafer base bumping process, we provide MS-AG80 ( SnAg ) and MS-CP70 ( Cu Pillar ) solution and provide high ASD and high quality material to customer.
 

MSC Overview:

  • Founded 2005
  • Historical Basis : Surface-Treatment Chemicals
  • 2 Plants in Korea, and 1 Plant in China
  • Certified ISO9001, 14001 & OHSAS System
  • Focusing R&D : 15% in total head counts Class 1,000
  • Max. capa 7-10 tons per month
  • Automatically controlling and monitoring in-line process
 
 

MS-AG80(SnAg)

 

Design Concepts

  • Meet to customer CTQs
    • No PR damage & crack during plating process
    • Bumping uniformity
    • No void or improve void performance compare with competitor
    • Bumping quality - no bump missing & no abnormal bump shape
    • Ag% Control
      • 1.8-2.3% regardless of ASD
    • Reliability (TC, THB, and HTS)
  • Improvement of ASD to increase of productivity
    • 8-16 ASD with adjustment of Ag% composition
  • Provide TCoO (Total Cost of Ownership) to customer
 

Comparison Data

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Item
High speed candidate
Model
Competitor A
Competitor B
MS-AG80
PR Leaching
AZ4620
Pass
Pass
Pass
AZP40XT
Pass
Pass
Pass
Optimized plating rate (ASD)
6um/min (12)
4um/min (8)
6um/min (12)
Uniformity after reflow (WID, <5%)
Max. 4.64
Max. 4.72
Max. 1.7
Uniformity after reflow (WIW, <10%)
Max. 7.98
Max. 14.1
Max. 4.38
Ag composition (Max %)
3.11
3.9
1.9
Bump surface after reflow
Good
Wrinkle
Good
Make-up cost ($ / L)
High
High
Low
Material Cost ($ / wafer)
High
High
Low
Process Cost ($ / wafer)
Middle
High
Low
►MS-AG80 showed a better position in terms of material quality and cost
 

MS-CP70 ( Cu Pillar )

 

Design Concepts

  • High deposition rate, more than 10 ASD (range 4-22 ASD)
  • Minimize or eliminate micro void during plating process
  • Using the purified raw materials to meet an excellent uniformity and RoHS requirement
  • Meet to customer CTQs
    • WID <5%
    • WIW <10%
    • Void free interface b/w Solder and Cu Pillar
  • Cost attractiveness
 

Plating Simulation with TSV

Solution
TSV Type
Machine

Base : 280mL
Suppressor :10mL
Leveler :2mL
Accelerator :10mL

 
10ASD
12ASD
14ASD
16ASD
18ASD
►No issue Cu plating at 10-18 ASD
 

Application for process

« Bumping »

« Cu Pillar »
Pb-Free Bump
Cu Pillar & u-Pillar
Diameter
75-150um
Diameter
20-100um
Product
MS-AG80
(High ASD Version)
MS-AG40
(Low ASD Version)
Product
MS-AG80(SnAg)
MS-CP70(Cu)

 
Company website:
http://www.mschemical.co.kr/